Dresden Area, Germany
Characterization engineer (IIIV, GaN, HEMT, LED, GaN on Si) at Azzurro Semiconductors
Semiconductors
Education
Ioffe Physical-Technical Institute (FTI) 2006 — 2010
Doctor of Philosophy (Ph.D.), Physics of Semiconductors
Ioffe Physical-Technical Institute (FTI) 2006 — 2010
PhD, Physics of Semiconductors
Peter the Great St.Petersburg Polytechnic University 2000 — 2006
2006, Physics, semiconductors, nanotechnology
Experience
Azzurro Semiconductors July 2011 - Present
A.F.Ioffe Physico-Technical institute 2006 - June 2011
A. F. Ioffe Physical-Technical Institute December 2000 - June 2006
Skills
AFM, Semiconductor Industry, Nanomaterials, Experimentation, Metrology, Electron Beam..., Semiconductor Device, XRD, Thin Films, MOCVD, Device Characterization, Characterization, Device Physics, Nanotechnology, Optics, Physics, Microelectronics, Design of Experiments, Yield, Compound Semiconductors, Simulation, Epitaxy, HEMT, Power Devices, Scanning Electron..., Failure Analysis, R&D, Laser Physics, Etching, GaN on Si, Electrical, Materials Science, LED, GaN, FET, Solid State Physics, Product Development, Simulations, Semiconductors, Semiconductor..., Optoelectronics, Silicon, Powder X-ray Diffraction, Electronics, Spectroscopy, Matlab, Solid State Lighting